Theory of Inhomogeneous Condensed Matter
Note: This department has relocated.

Diffusion of implanted 195Au radiotracer atoms in amorphous silicon under irradiation with 1 MeV-N+ ions

2001

Conference Paper

icm


Author(s): Voss, T. and Scharwaechter, P. and Frank, W.
Book Title: Proceedings of DIMAT 2000, the Fifth International Conference on Diffusion in Materials
Volume: 194/199
Pages: 659--665
Year: 2001
Series: Defect and Diffusion Forum
Publisher: Scitec Publications Ltd.

Department(s): Theory of Inhomogeneous Condensed Matter
Bibtex Type: Conference Paper (inproceedings)

Address: Paris, France
Language: eng

BibTex

@inproceedings{escidoc:1574305,
  title = {Diffusion of implanted 195Au radiotracer atoms in amorphous silicon under irradiation with 1 MeV-N+ ions},
  author = {Voss, T. and Scharwaechter, P. and Frank, W.},
  booktitle = {Proceedings of DIMAT 2000, the Fifth International Conference on Diffusion in Materials},
  volume = {194/199},
  pages = {659--665},
  series = {Defect and Diffusion Forum},
  publisher = {Scitec Publications Ltd.},
  address = {Paris, France},
  year = {2001},
  doi = {}
}